Semiconductor Advanced Packaging
Performance, power efficiency, area, and cost are driving packaging innovations. Learn how workflows provide fast, precise, and accurate time-to-data.
Demand for faster, smaller, and more interconnected devices continues to drive atomic scale technology developments. Researchers and engineers need reliable and rapid analysis and characterization at these dimensions, which only transmission electron microscopy (TEM) can provide.
The Thermo Scientific Talos F200E (Scanning) Transmission Electron Microscope provides high-resolution STEM and TEM imaging with minimal distortion, combined with high-throughput energy-dispersive X-ray spectroscopy (EDS) functionality, tailored for a wide range of semiconductor defect analysis and research applications.
A high-productivity solution for semiconductor and microelectronics analysis
Supporting the fast pace of process development and yield ramp significantly strains semiconductor analysis labs, as they must provide repeatable, high-resolution characterization of a wide variety of materials and devices. The Talos F200E (S)TEM was designed with these labs in mind, delivering >1.5× faster EDS analysis compared to previous Talos models and ≤1% TEM image distortion. The speed and repeatability improvements make the Talos F200E (S)TEM the industry choice for device analysis, defect characterization, and yield support.
High-quality (S)TEM imaging
High-throughput TEM imaging with minimized distortion and simultaneous, multiple-signal detection, and contrast-optimized STEM imaging.
Precise, high-speed chemical characterization
Rapid, precise, qualitative or quantitative EDS acquisition and analysis.
Dedicated semiconductor-related applications
Includes: specimen-stage-synchronized live TEM image rotation, simultaneous operation of multiple STEM detectors, integrated differential phase contrast (iDPC) imaging, STEM field-of-view matching, instant EDS map quantification, minimized image distortion, and more.
Style Sheet for Products Table Specifications
| Brightness of X-FEG | 1.8 × 109 A/cm2 srad (@200 kV) | |
| Total beam current | > 50 nA | |
| EDS system | Super-X | Dual-X |
| Full solid angle | 0.9 srad | 2.56 srad |
| Effective solid angle* | 0.9 srad | 1.65 srad |
| Detectors | 4 SDD | 2 larger SDD |
| Camera | Low-distortion 4k × 4k with the Thermo Scientific Ceta-M Camera | |
| STEM | Panther STEM segment detectors | |
| SEMI S2 | Certified | |
| STEM resolution | ≤0.16 nm | |
| TEM information limit | ≤0.12 nm | |
| TEM line resolution | ≤0.10 nm | |
| Max. diffraction angle | 24˚ | |
| Z-movement | ±0.375 mm | |
| TEM image linear distortion | ≤1% | |
| TEM image variation(optional) | ≤1% | |
| Gatan Continuum Filter | Optional | |
Semiconductor Failure Analysis
Complex semiconductor device structures result in more places for defects to hide. Learn more about failure analysis solutions to isolate, analyze, and repair defects.
Semiconductor materials characterization
Many factors impact yield, performance, and reliability. Learn more about solutions to characterize physical, structural, and chemical properties.
Semiconductor power devices
Novel architectures and materials pose new challenges. Learn how to pinpoint faults and characterize materials, structures, and interfaces.
Semiconductor display technology
Display technologies are evolving to improve display quality and light conversion efficiency. Learn how metrology, failure analysis, and characterization solutions provide insights.
Style Sheet to change Applications H3 to p with em-h3-header class
Style Sheet to change H3 to p with em-h3-header class
Style Sheet to change H2 style to p with em-h2-header class
Style Sheet for Komodo Tabs
Style Sheet for Support and Service footer
Style Sheet for Fonts
Style Sheet for Cards